Homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy

Thick high-purity beta-Ga2O3 layers of high crystalline quality were grown homoepitaxially by halide vapor phase epitaxy (HVPE) using gaseous GaCl and O-2 on (001) beta-Ga2O3 substrates prepared by edge-defined film-fed growth. The surface morphology and structural quality of the grown layer improved with increasing growth temperature. X-ray diffraction omega-rocking curves for the (002) and (400) reflections for the layer grown at 1000 degrees C had small full widths at half maximum. Secondary ion mass spectrometry and electrical characteristics revealed that the growth of high-purity beta-Ga2O3 layers with low effective donor concentration (N-d - N-a < 10(13) cm(-3)) is possible by HVPE. (C) 2015 The Japan Society of Applied Physics