Guest Editorial: The dawn of gallium oxide microelectronics

High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

(2017) Jiancheng Yang et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

(2017) Daisuke Tahara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ab initio velocity-field curves in monoclinic β-Ga2O3

(2017) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®

(2016) Masaya Oda et al.   Applied Physics Express

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals

(2016) T. Onuma et al.   APPLIED PHYSICS LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

(2016) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

(2016) Patrick Vogt et al.   APPLIED PHYSICS LETTERS

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

(2016) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

(2016) Francesco Mezzadri et al.   INORGANIC CHEMISTRY

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

(2016) Marko J. Tadjer et al.   JOURNAL OF ELECTRONIC MATERIALS

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

(2016) Zbigniew Galazka et al.   ECS Journal of Solid State Science and Technology

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates

(2016) Michele Baldini et al.   ECS Journal of Solid State Science and Technology

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates

(2015) Yuichi Oshima et al.   Applied Physics Express

Lattice thermal conductivity in β-Ga2O3 from first principles

(2015) Marco D. Santia et al.   APPLIED PHYSICS LETTERS

Anisotropic thermal conductivity in single crystal β-gallium oxide

(2015) Zhi Guo et al.   APPLIED PHYSICS LETTERS

Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

(2015) Takeyoshi Onuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1−x)2O3 films

(2015) Ryo Wakabayashi et al.   JOURNAL OF CRYSTAL GROWTH

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Brillouin zone and band structure of β-Ga2O3

(2015) Hartwin Peelaers et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Temperature-dependent thermal conductivity in Mg-doped and undopedβ-Ga2O3bulk-crystals

(2015) M Handwerg et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

(2013) Guenter Wagner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Successful Growth of Conductive Highly Crystalline Sn-Doped $\alpha$-Ga$_{2}$O$_{3}$ Thin Films by Fine-Channel Mist Chemical Vapor Deposition

(2012) Toshiyuki Kawaharamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

(2012) Takayoshi Oshima et al.   JOURNAL OF CRYSTAL GROWTH

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

(2008) Daisuke Shinohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS