标题
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
作者
关键词
-
出版物
Applied Physics Reviews
Volume 2, Issue 2, Pages 021307
出版商
AIP Publishing
发表日期
2015-06-19
DOI
10.1063/1.4922748
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces
- (2015) Gang Liu et al. APPLIED PHYSICS LETTERS
- Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery
- (2015) Gang Liu et al. APPLIED SURFACE SCIENCE
- Interface Properties of 4H-SiC ( $11\bar {2}0$ ) and ( $1\bar {1}00$ ) MOS Structures Annealed in NO
- (2015) Seiya Nakazawa et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
- (2015) Hiroshi Yano et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
- (2015) Aivars J. Lelis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties
- (2014) Gang Liu et al. APPLIED PHYSICS LETTERS
- Effects of interface state density on 4H-SiC n-channel field-effect mobility
- (2014) APPLIED PHYSICS LETTERS
- High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
- (2014) Daniel J. Lichtenwalner et al. APPLIED PHYSICS LETTERS
- Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation
- (2014) Richard Heihachiro Kikuchi et al. APPLIED PHYSICS LETTERS
- Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation
- (2014) Zengjun Chen et al. APPLIED SURFACE SCIENCE
- Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range
- (2014) Reza Ghandi et al. IEEE ELECTRON DEVICE LETTERS
- Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
- (2014) Dai Okamoto et al. IEEE ELECTRON DEVICE LETTERS
- High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
- (2014) Aaron Modic et al. IEEE ELECTRON DEVICE LETTERS
- Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements
- (2014) Hironori Yoshioka et al. JOURNAL OF APPLIED PHYSICS
- Atomic state and characterization of nitrogen at the SiC/SiO2 interface
- (2014) Y. Xu et al. JOURNAL OF APPLIED PHYSICS
- Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces
- (2014) A. Modic et al. JOURNAL OF ELECTRONIC MATERIALS
- Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers
- (2014) Peizhi Liu et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C
- (2014) S. M. Thomas et al. IEEE Journal of the Electron Devices Society
- Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
- (2013) P. Fiorenza et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC
- (2013) Koutarou Kawahara et al. Applied Physics Express
- SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
- (2013) P. Fiorenza et al. APPLIED PHYSICS LETTERS
- Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices
- (2013) B. R. Tuttle et al. APPLIED PHYSICS LETTERS
- The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance
- (2013) C. J. Cochrane et al. APPLIED PHYSICS LETTERS
- Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation
- (2013) Gang Liu et al. IEEE ELECTRON DEVICE LETTERS
- Competing atomic and molecular mechanisms of thermal oxidation—SiC versus Si
- (2013) Xiao Shen et al. JOURNAL OF APPLIED PHYSICS
- Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations
- (2013) Al-Moatasem El-Sayed et al. MICROELECTRONIC ENGINEERING
- Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC
- (2013) F. Wang et al. NANO LETTERS
- Development of gallium oxide power devices
- (2013) Masataka Higashiwaki et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics
- (2013) Wenbo Li et al. PHYSICAL REVIEW B
- A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
- (2013) Liwen Sang et al. SENSORS
- Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors
- (2012) Mitsuo Okamoto et al. Applied Physics Express
- Generation of very fast states by nitridation of the SiO2/SiC interface
- (2012) Hironori Yoshioka et al. JOURNAL OF APPLIED PHYSICS
- Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
- (2012) Hironori Yoshioka et al. JOURNAL OF APPLIED PHYSICS
- Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
- (2011) T. Umeda et al. APPLIED PHYSICS LETTERS
- Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures
- (2011) Xiao Shen et al. APPLIED PHYSICS LETTERS
- Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density
- (2011) R. Kosugi et al. APPLIED PHYSICS LETTERS
- Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs
- (2011) John Rozen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors
- (2011) C. J. Cochrane et al. JOURNAL OF APPLIED PHYSICS
- High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors
- (2011) B. R. Tuttle et al. JOURNAL OF APPLIED PHYSICS
- Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2interface through hybrid functionals
- (2011) Fabien Devynck et al. PHYSICAL REVIEW B
- Phosphorous passivation of the SiO2/4H–SiC interface
- (2011) Y.K. Sharma et al. SOLID-STATE ELECTRONICS
- Structure and stoichiometry of (0001) 4H–SiC/oxide interface
- (2010) Xingguang Zhu et al. APPLIED PHYSICS LETTERS
- Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
- (2010) Dai Okamoto et al. IEEE ELECTRON DEVICE LETTERS
- Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
- (2010) S. Dhar et al. JOURNAL OF APPLIED PHYSICS
- Deep levels induced by reactive ion etching in n- and p-type 4H–SiC
- (2010) Koutarou Kawahara et al. JOURNAL OF APPLIED PHYSICS
- Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
- (2009) Toru Hiyoshi et al. Applied Physics Express
- Shape Control and Roughness Reduction of SiC Trenches by High-Temperature Annealing
- (2009) Yasuyuki Kawada et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
- (2009) John Rozen et al. JOURNAL OF APPLIED PHYSICS
- Vacancy-related defects and theEδ′center in amorphous silicon dioxide: Density functional calculations
- (2009) Blair R. Tuttle et al. PHYSICAL REVIEW B
- First-principles investigation on initial stage of 2H-SiC(001) surface oxidation
- (2009) JunJie Wang et al. Science Bulletin
- Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
- (2008) Aivars J. Lelis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Physical Model of High Temperature 4H-SiC MOSFETs
- (2008) Siddharth Potbhare et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation
- (2008) Alexey Gavrikov et al. JOURNAL OF APPLIED PHYSICS
- Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface
- (2008) John Rozen et al. JOURNAL OF APPLIED PHYSICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started