High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

标题
High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
作者
关键词
-
出版物
Applied Physics Express
Volume 8, Issue 3, Pages 031101
出版商
Japan Society of Applied Physics
发表日期
2015-02-12
DOI
10.7567/apex.8.031101

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