4.4 Article

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-Ga2O3 single crystal along [100], [010] and [001]

期刊

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/12/125006

关键词

beta-Ga2O3; thermal conductivity; thermal diffusivity; 2 omega-method; anisotropy

资金

  1. 'MatSEC Graduate School', Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH
  2. German science foundation [Fi932/7-2]

向作者/读者索取更多资源

The monoclinic crystal structure of beta-Ga2O3 leads to significant anisotropy of the thermal properties. The 2 omega-method is used to measure the thermal diffusivity D in [010] and [001] direction respectively and to determine the thermal conductivity values lambda of the [100], [010] and [001] direction from the same insulating Mg-doped beta-Ga2O3 single crystal. We detect a temperature independent anisotropy factor of both the thermal diffusivity and conductivity values of D-[010]/D-[001] = lambda([010])/lambda([001]) = 1.4 +/- 0.1. The temperature dependence is in accord with phonon-phonon-Umklapp-scattering processes from 300 K down to 150 K. Below 150 K point-defect-scattering lowers the estimated phonon-phonon-Umklapp-scattering values.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Physics, Applied

Growth of bulk β-Ga2O3 single crystals by the Czochralski method

Zbigniew Galazka

Summary: This Tutorial provides a detailed description of the critical aspects of bulk beta-Ga2O3 single crystal growth using the Czochralski method. It covers the thermodynamics of Ga2O3, comprehensive solutions for crystal size scale-up, the impact of free carrier absorption on growth stability, and important factors such as crystal growth direction and intentional doping. The resulting crystals' structural quality and basic physical properties are also discussed.

JOURNAL OF APPLIED PHYSICS (2022)

Article Physics, Applied

Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method

Zbigniew Galazka, Steffen Ganschow, Palvan Seyidov, Klaus Irmscher, Mike Pietsch, Ta-Shun Chou, Saud Bin Anooz, Raimund Grueneberg, Andreas Popp, Andrea Dittmar, Albert Kwasniewski, Manuela Suendermann, Detlef Klimm, Thomas Straubinger, Thomas Schroeder, Matthias Bickermann

Summary: Two inch diameter highly conducting (Si-doped) beta-Ga2O3 single crystals with high structural quality and surface smoothness were grown by the Czochralski method, making them suitable substrates for homoepitaxy and electronic device fabrication.

APPLIED PHYSICS LETTERS (2022)

Article Instruments & Instrumentation

Development of a cryogenic In2O3 calorimeter to measure the spectral shape of 115In β-decay

E. Celi, Z. Galazka, M. Laubenstein, S. Nagorny, L. Pagnanini, S. Pirro, A. Puiu

Summary: The paper proposes using a cryogenic calorimeter based on an In2O3 crystal for high-precision measurement of the beta-decay energy spectrum, and discusses the preliminary test results and future improvements.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2022)

Article Materials Science, Multidisciplinary

Thermal conductivity, diffusivity and specific heat capacity of as-grown, degenerate single-crystalline ZnGa2O4

Johannes Boy, Ruediger Mitdank, Zbigniew Galazka, Saskia F. Fischer

Summary: This study provides the first experimental determination of the low-temperature thermal properties of novel highly pure single-crystalline ZnGa2O4. It was found that the thermal conductivity increases with decreasing temperatures due to reduced phonon-phonon Umklapp scattering down to 50 K, while at lower temperatures, the thermal conductivity is limited by boundary scattering.

MATERIALS RESEARCH EXPRESS (2022)

Article Materials Science, Multidisciplinary

First- and second-order Raman spectroscopy of monoclinic β-Ga2O3

Benjamin M. Janzen, Roland Gillen, Zbigniew Galazka, Janina Maultzsch, Markus R. Wagner

Summary: This study investigates the first- and second-order Raman modes of monoclinic beta-Ga2O3 through a combined experimental-theoretical approach. The phonon frequencies of beta-Ga2O3 are determined through polarized micro-Raman spectroscopy measurements on single crystals. By utilizing density functional perturbation theory and group-theoretical analysis, the mode frequencies, phonon dispersion relation, and phonon density of states are calculated and correlated with experimental results. This study also demonstrates the simultaneous determination of Raman, IR, and acoustic phonons in beta-Ga2O3 using second-order Raman spectroscopy.

PHYSICAL REVIEW MATERIALS (2022)

Article Chemistry, Multidisciplinary

Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts

Ming-Hsun Lee, Ta-Shun Chou, S. Bin Anooz, Zbigniew Galazka, Andreas Popp, Rebecca L. Peterson

Summary: In this study, we demonstrate a significant improvement in Ti/Au ohmic contact performance by utilizing the anisotropic nature of ??-Ga2O3. Through comprehensive electrical and material characterization of Ti/Au metallization on different semiconductor orientations, we provide direct evidence and insights into the dependence of device performance on the atomic-scale structural anisotropy of ??-Ga2O3.

ACS NANO (2022)

Article Physics, Applied

Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

Ta-Shun Chou, Saud Bin Anooz, Raimund Grueneberg, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Klaus Irmscher, Palvan Seyidov, Wolfram Miller, Zbigniew Galazka, Martin Albrecht, Andreas Popp

Summary: (English Summary:) This study proposes a Langmuir adsorption model for the Si incorporation mechanism into (100) beta-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy, based on the competitive surface adsorption process between Si and Ga atoms. The model describes the major features of the doping process and shows a growth rate-dependent doping behavior, which is experimentally validated and further generalized to different growth conditions and substrate orientations.

APPLIED PHYSICS LETTERS (2022)

Article Physics, Applied

Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application

Jana Rehm, Ta-Shun Chou, Saud Bin Anooz, Palvan Seyidov, Andreas Fiedler, Zbigniew Galazka, Andreas Popp

Summary: This study provides an overview of the applications of MOVPE-grown (100) beta-Ga2O3 thin films in high-power electronics and discusses the challenges faced. Through analyzing the structural defect formation mechanism, substrate treatment strategies, and growth windows, the grown film was optimized to meet the requirements for device fabrication. Furthermore, this study proposes strategies for future growth process optimization.

APPLIED PHYSICS LETTERS (2022)

Article Physics, Applied

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grueneberg, Mike Pietsch, Jana Rehm, Thi Thuy Vi Tran, Kornelius Tetzner, Zbigniew Galazka, Martin Albrecht, Klaus Irmscher, Andreas Fiedler, Andreas Popp

Summary: This study investigated the MOVPE of (100) beta-Ga2O3 films for high-power electronic devices. A height-adjustable showerhead close to the susceptor was crucial in increasing the stability of the Ga wetting layer on the surface and reducing parasitic particles. The achieved film thickness was up to 3 μm with a low root mean square value, and record carrier mobilities were observed at room temperature.

APPLIED PHYSICS LETTERS (2023)

Article Crystallography

The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 K

Detlef Klimm, Binderiya Amgalan, Steffen Ganschow, Albert Kwasniewski, Zbigniew Galazka, Matthias Bickermann

Summary: This paper presents laser flash measurements of the thermal conductivity of Czochralski-grown beta-Ga2O3 single crystals along different crystallographic lattice planes. The results show that the thermal conductivity has orientation dependence and varies with temperature.

CRYSTAL RESEARCH AND TECHNOLOGY (2023)

Article Physics, Applied

High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grueneberg, Jana Rehm, Tran Thi Thuy Vi, Andreas Fiedler, Kornelius Tetzner, Zbigniew Galazka, Martin Albrecht, Andreas Popp

Summary: In this study, the development of unwanted parasitic particles in the MOVPE chamber during the growth of mu m level films is comprehensively investigated. The density of parasitic particles is observed to be significant at film thicknesses starting from >1.5 to 2 mu m. These particles induce structural defects, such as twin lamellae, which adversely affect the electrical properties of the grown film. The parasitic particles originate from parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, and their density can be reduced by increasing total gas flow and reducing the showerhead distance to the susceptor. After minimizing the density of parasitic particles, film thicknesses up to 4 mu m have been achieved. RT Hall measurements reveal carrier mobilities of 160 cm(2)V(-1)s(-1) at carrier concentrations of 5.7 x 10(16) cm(-3).

JAPANESE JOURNAL OF APPLIED PHYSICS (2023)

Article Physics, Applied

Bulk single crystals and physical properties of β-(AlxGa1-x)2O3 (x=0-0.35) grown by the Czochralski method

Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Steffen Ganschow, Albert Kwasniewski, Palvan Seyidov, Mike Pietsch, Andrea Dittmar, Saud Bin Anooz, Klaus Irmscher, Manuela Suendermann, Detlef Klimm, Ta-Shun Chou, Jana Rehm, Thomas Schroeder, Matthias Bickermann

Summary: We studied the growth and physical properties of β-(AlxGa1-x)(2)O-3 single crystals with different Al contents using the Czochralski method. The Al segregation coefficient in the Ga2O3 melt resulted in higher Al content in the crystals. By co-doping with Si or Mg, we obtained semiconducting, degenerately semiconducting, or semi-insulating crystals. The lattice constants decreased anisotropically, while the optical bandgap increased linearly with Al content.

JOURNAL OF APPLIED PHYSICS (2023)

Article Crystallography

Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) β-Ga2O3 thin films using in-situ reflectance spectroscopy

Ta-Shun Chou, Saud Bin Anooz, Raimund Grueneberg, Thuy Vi Thi Tran, Jana Rehm, Zbigniew Galazka, Andreas Popp

Summary: Si-doped beta-Ga2O3 layers were grown on (100) beta-Ga2O3 semi-insulating substrates by MOVPE, and their reflection spectrum on the substrate surface was investigated. Transforming the reflectance spectrum into the autocorrelation domain revealed a more pronounced Fabry-Pe 'rot oscillation, which allowed for easy estimation of the growth rate and growth mode based on the period and damping behavior of the spectrum. The observed oscillation contributed to the refractive index difference between the substrate and the film caused by impurities and preparation techniques. The high sensitivity of reflectance spectroscopy demonstrated its advantage as a powerful growth process monitoring tool.

JOURNAL OF CRYSTAL GROWTH (2023)

Article Physics, Applied

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm-1

Kornelius Tetzner, Michael Klupsch, Andreas Popp, Saud Bin Anooz, Ta-Shun Chou, Zbigniew Galazka, Karina Ickert, Mathias Matalla, Ralph-Stephan Unger, Eldad Bahat Treidel, Mihaela Wolf, Achim Trampert, Joachim Wuerfl, Oliver Hilt

Summary: In this work, vertical (100) beta-Ga2O3 FinFET devices were realized for power electronics applications. The devices were fabricated on highly conducting (100) beta-Ga2O3 substrates and epitaxially grown layers with specific doping concentrations for the drift and channel regions. The fabricated FinFET devices showed enhancement-mode properties and measured breakdown strength.

JAPANESE JOURNAL OF APPLIED PHYSICS (2023)

Article Materials Science, Multidisciplinary

A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment

Wahib Aggoune, Alberto Eljarrat, Dmitrii Nabok, Klaus Irmscher, Martina Zupancic, Zbigniew Galazka, Martin Albrecht, Christoph Koch, Claudia Draxl

Summary: The perovskite barium stannate (BaSnO3) shows promise for electronic applications due to its transparency and high room-temperature mobility. A combined theoretical and experimental study provides a consistent picture of its electronic structure and optical excitations.

COMMUNICATIONS MATERIALS (2022)

暂无数据