期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 65, 期 8, 页码 1951-1955出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2018.2849405
关键词
Device simulations; heavy ions; power devices; power MOSFETs; silicon carbide (SiC); single-event burnout (SEB); single-event effects; TCAD
资金
- Vanderbilt University through NASA ESI [NNX17AD09G]
- NASA Goddard through the NEPP Program
- University of Jyvaskyla through ESA/ESTEC [4000111630/14/NL/PA]
- Academy of Finland [2513553]
- NASA [NNX17AD09G, 1003281] Funding Source: Federal RePORTER
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm(2)/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.
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