期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 4, 页码 568-571出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2805785
关键词
Ga2O3; MESFET; MBE; delta dope; wide bandgap
资金
- Air Force Research Laboratory, WPAFB, Dayton Ohio
We report silicon delta-doped beta-Ga2O3 metal semiconductor field effect transistors (MESFETs) with source-drain ohmic contacts formed by patterned regrowth of n-type Ga2O3. We show that regrown n-type contacts can enable a lateral low-resistance contact to the two-dimensional electron gas channel, with contact resistance lower than 1.5 Omega-mm. The fabricated MESFET has a peak drain current (I-D,I-MAX) of 140 mA/mm, transconductance (g(m)) of 34 mS/mm, and 3-terminal off-state breakdown voltage of 170 V. The proposed device structure could provide a promising path towards vertically scaled beta-Ga2O3 field effect transistors.
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