期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 55, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.55.1202BB
关键词
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资金
- Japan Society for the Promotion of Science (JSPS) [24360124, 15H03977]
- Mazda Foundation
- Collaborative Research Programs of the Research Institute for Applied Mechanics, Kyushu University
- Institute of Ocean Energy, Saga University
- Kyushu Synchrotron Light Research Center (Saga-LS)
- Grants-in-Aid for Scientific Research [15H03977, 26390057] Funding Source: KAKEN
We fabricated Schottky barrier diodes (SBDs) on the entire surface of a (010) beta-Ga2O3 single crystal, and investigated the leakage current in both forward and reverse directions. Subsequently, we investigated the distribution of dislocation and void etch pits on the entire surface. The dislocation etch pit density on the surface ranged from < 1 x 10(3) to 6 x 10(4), and its average was 1.1 x 10(4) cm(-2). The void etch pit density on the surface ranged from < 5 x 10(2) to 7 x 10(3), and its average was 6 x 10(3) cm(-2). From a comparison between the SBD leakage current and the dislocation and void etch pit densities, we found that dislocations are closely related to the SBD reverse leakage current, and that not all voids produce the leakage current. (C) 2016 The Japan Society of Applied Physics
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