Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance

(2022) M. Hoffmann et al.   APPLIED PHYSICS LETTERS

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

(2022) Wonjun Shin et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

(2022) Ryun-Han Koo et al.   IEEE ELECTRON DEVICE LETTERS

Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

(2022) Wonjun Shin et al.   IEEE ELECTRON DEVICE LETTERS

Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

(2021) Tiancheng Gong et al.   IEEE ELECTRON DEVICE LETTERS

First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

(2021) Md Nur K Alam et al.   JOURNAL OF APPLIED PHYSICS

Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering

(2021) Pengying Chang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric HfO2-based synaptic devices: recent trends and prospects

(2021) Shimeng Yu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application

(2021) Kyung Kyu Min et al.   APPLIED SURFACE SCIENCE

Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

(2021) Wonjun Shin et al.   Nanoscale

Reliability of analog resistive switching memory for neuromorphic computing

(2020) Meiran Zhao et al.   Applied Physics Reviews

Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions

(2020) Giulio Franchini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor

(2020) Pengying Chang et al.   IEEE ELECTRON DEVICE LETTERS

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

(2020) Yiming Qu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

SIMS study of oxygen diffusion in monoclinic HfO2

(2018) Michael P. Mueller et al.   APPLIED PHYSICS LETTERS

Interplay between ferroelectric and resistive switching in doped crystalline HfO2

(2018) Benjamin Max et al.   JOURNAL OF APPLIED PHYSICS

The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

(2018) Youngin Goh et al.   NANOTECHNOLOGY

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

(2012) S. Clima et al.   APPLIED PHYSICS LETTERS

Formulas of 1/f noise in Schottky barrier diodes under reverse bias

(2011) Chan Hyeong Park et al.   SOLID-STATE ELECTRONICS