期刊
IEEE ELECTRON DEVICE LETTERS
卷 44, 期 6, 页码 935-938出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2023.3267771
关键词
Iron; Hafnium oxide; Switches; Annealing; Tunneling; Resistance; Logic gates; Ferroelectric tunnel junction (FTJ); low-frequency noise (LFN); post-metal annealing (PMA)
We investigate the effect of post-metal annealing temperature (T-PMA) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low frequency noise spectroscopy, the effects of T-PMA on RS mechanisms are demonstrated. It is revealed that the non FE RS, redistribution of oxygen vacancies, is suppressed with an increase in T-PMA. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.
We investigate the effect of post-metal annealing temperature (T-PMA) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low frequency noise spectroscopy, the effects of T-PMA on RS mechanisms are demonstrated. It is revealed that the non FE RS, redistribution of oxygen vacancies, is suppressed with an increase in T-PMA. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.
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