Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance

Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions

(2021) P. Chaudhary et al.   APPLIED PHYSICS LETTERS

Progress and future prospects of negative capacitance electronics: A materials perspective

(2021) Michael Hoffmann et al.   APL Materials

Thermal atomic layer etching: A review

(2021) Andreas Fischer et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Thermal atomic layer etching of amorphous and crystalline Al2O3 films

(2021) Jessica A. Murdzek et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x -based metal-ferroelectric-insulator-semiconductor stack

(2021) Kyung Kyu Min et al.   NANOTECHNOLOGY

Ferroelectric HfO2-based synaptic devices: recent trends and prospects

(2021) Shimeng Yu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Intrinsic Nature of Negative Capacitance in Multidomain Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric/Dielectric Heterostructures

(2021) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

(2021) K.-Y. Hsiang et al.   IEEE ELECTRON DEVICE LETTERS

Deposit and etchback approach for ultrathin Al2O3 films with low pinhole density using atomic layer deposition and atomic layer etching

(2021) Jonas C. Gertsch et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon

(2021) Suraj S. Cheema et al.   Advanced Electronic Materials

Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide

(2020) Jessica A. Murdzek et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Mechanisms of Thermal Atomic Layer Etching

(2020) Steven M. George   ACCOUNTS OF CHEMICAL RESEARCH

Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

(2020) Aniruddh Shekhawat et al.   NANOTECHNOLOGY

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

(2019) Hojoon Ryu et al.   Scientific Reports

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

(2018) Xuan Tian et al.   APPLIED PHYSICS LETTERS

Interplay between ferroelectric and resistive switching in doped crystalline HfO2

(2018) Benjamin Max et al.   JOURNAL OF APPLIED PHYSICS

Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

(2018) Youngin Goh et al.   APPLIED PHYSICS LETTERS

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

(2018) Lin Chen et al.   Nanoscale

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Optimizing process conditions for improved Hf 1−x Zr x O 2 ferroelectric capacitor performance

(2017) Terence Mittmann et al.   MICROELECTRONIC ENGINEERING

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Overview of atomic layer etching in the semiconductor industry

(2015) Keren J. Kanarik et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

(2015) T. Faraz et al.   ECS Journal of Solid State Science and Technology

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(2013) U. Schroeder et al.   ECS Journal of Solid State Science and Technology

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS