Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

Two-Dimensional Antiferroelectric Tunnel Junction

(2021) Jun Ding et al.   PHYSICAL REVIEW LETTERS

Ferroic tunnel junctions and their application in neuromorphic networks

(2020) Rui Guo et al.   Applied Physics Reviews

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

(2020) Junghyeon Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

(2020) Radu Berdan et al.   Nature Electronics

Wake‐Up Effect in HfO 2 ‐Based Ferroelectric Films

(2020) Pengfei Jiang et al.   Advanced Electronic Materials

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

(2019) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

(2019) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

(2018) Taeho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network

(2018) Zheng Chai et al.   IEEE ELECTRON DEVICE LETTERS

In situ click chemistry generation of cyclooxygenase-2 inhibitors

(2017) Atul Bhardwaj et al.   Nature Communications

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State

(2015) Francesco Maria Puglisi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

Evidence for interacting two-level systems from the 1/f noise of a superconducting resonator

(2014) J. Burnett et al.   Nature Communications

Low-frequency 1/f noise in graphene devices

(2013) Alexander A. Balandin   Nature Nanotechnology

RTS noise characterization of HfOx RRAM in high resistive state

(2013) Francesco M. Puglisi et al.   SOLID-STATE ELECTRONICS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

(2012) Jung-Kyu Lee et al.   APPLIED PHYSICS LETTERS

Ferroelectric Field Effect Transistors for Memory Applications

(2010) Jason Hoffman et al.   ADVANCED MATERIALS

Conduction and Low-Frequency Noise Analysis in $ \hbox{Al}/\alpha\hbox{-TiO}_{X}/\hbox{Al}$ Bipolar Switching Resistance Random Access Memory Devices

(2010) Jung-Kyu Lee et al.   IEEE ELECTRON DEVICE LETTERS

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

(2009) V. Garcia et al.   NATURE