Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

(2022) Wonjun Shin et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

(2021) Dongseok Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

(2021) Wonjun Shin et al.   IEEE ELECTRON DEVICE LETTERS

Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering

(2021) Pengying Chang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

(2021) Subhajit Ghosh et al.   APPLIED PHYSICS LETTERS

Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application

(2021) Kyung Kyu Min et al.   APPLIED SURFACE SCIENCE

Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

(2021) Wonjun Shin et al.   Nanoscale

Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

(2020) Junghyeon Hwang et al.   IEEE ELECTRON DEVICE LETTERS

TCAD modeling of neuromorphic systems based on ferroelectric tunnel junctions

(2020) Yu He et al.   Journal of Computational Electronics

Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS2 devices

(2019) Ruben Salgado et al.   Applied Physics Express

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

(2019) Zheng Wen et al.   ADVANCED MATERIALS

Optimization of ferroelectric tunnel junction TFET in presence of temperature and its RF analysis

(2019) Ghosh Puja et al.   MICROELECTRONICS JOURNAL

Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2015) M. H. Park et al.   Journal of Materials Chemistry C

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

(2014) Deepak Sharma et al.   NANOTECHNOLOGY

Origin of 1/f noise in graphene multilayers: Surface vs. volume

(2013) Guanxiong Liu et al.   APPLIED PHYSICS LETTERS

Beyond the barrier

(2013) E. Y. Tsymbal et al.   NATURE MATERIALS

Current conduction mechanisms in Pr2O3/oxynitride laminated gate dielectrics

(2009) Fu-Chien Chiu et al.   JOURNAL OF APPLIED PHYSICS