Interplay between ferroelectric and resistive switching in doped crystalline HfO2

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2Thin Films

(2016) Min Hyuk Park et al.   ADVANCED MATERIALS

Oxide stoichiometry-controlled TaOx-based resistive switching behaviors

(2016) Gwang Ho Baek et al.   APPLIED PHYSICS LETTERS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices

(2016) W. Kim et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

(2015) Liang Zhao et al.   APPLIED PHYSICS LETTERS

Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices

(2015) S. Brivio et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

(2015) Patrick D. Lomenzo et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

(2013) Simone Balatti et al.   IEEE ELECTRON DEVICE LETTERS

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

(2013) P Calka et al.   NANOTECHNOLOGY

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(2013) U. Schroeder et al.   ECS Journal of Solid State Science and Technology

Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

(2012) H. Mähne et al.   SOLID-STATE ELECTRONICS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors

(2011) Shuhei Tanakamaru et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The influence of crystallinity on the resistive switching behavior of TiO2

(2011) H. Mähne et al.   MICROELECTRONIC ENGINEERING

Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

(2011) L.P.B. Lima et al.   MICROELECTRONIC ENGINEERING

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films

(2008) Chih-Yang Lin et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today