Stochastic Memory Devices for Security and Computing

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

(2019) Wei Wang et al.   Nature Communications

Secure integration of IoT and Cloud Computing

(2018) Christos Stergiou et al.   Future Generation Computer Systems-The International Journal of eScience

Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory

(2018) Roberto Carboni et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime

(2018) Roberto Carboni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

(2018) Alessandro Bricalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

(2018) Alessandro Bricalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Neural-like computing with populations of superparamagnetic basis functions

(2018) Alice Mizrahi et al.   Nature Communications

Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity With RRAM Synapses

(2018) Giacomo Pedretti et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

A Retrospective and a Look Forward: Fifteen Years of Physical Unclonable Function Advancement

(2017) Chip-Hong Chang et al.   IEEE Circuits and Systems Magazine

The Promise and Challenge of Stochastic Computing

(2017) Armin Alaghi et al.   IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS

Emerging Embedded and Cyber Physical System Security Challenges and Innovations

(2017) Kim-Kwang Raymond Choo et al.   IEEE Transactions on Dependable and Secure Computing

Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation

(2017) Enrico Piccinini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase-Change Memory—Towards a Storage-Class Memory

(2017) Scott W. Fong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm

(2017) Hideo Sato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

(2017) Suhas Kumar et al.   NATURE

Reviewing the Evolution of the NAND Flash Technology

(2017) Christian Monzio Compagnoni et al.   PROCEEDINGS OF THE IEEE

Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

(2017) Shubham Sahay et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A novel true random number generator based on a stochastic diffusive memristor

(2017) Hao Jiang et al.   Nature Communications

Low-Energy Truly Random Number Generation with Superparamagnetic Tunnel Junctions for Unconventional Computing

(2017) D. Vodenicarevic et al.   Physical Review Applied

Stochastic Spin-Orbit Torque Devices as Elements for Bayesian Inference

(2017) Yong Shim et al.   Scientific Reports

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Bayesian Inference With Muller C-Elements

(2016) Joseph S. Friedman et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Physical Unclonable Function Exploiting Sneak Paths in Resistive Cross-point Array

(2016) Ligang Gao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

(2016) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Stochastic phase-change neurons

(2016) Tomas Tuma et al.   Nature Nanotechnology

Spintronics and Security: Prospects, Vulnerabilities, Attack Models, and Preventions

(2016) Swaroop Ghosh   PROCEEDINGS OF THE IEEE

Magnetoresistive Random Access Memory

(2016) Dmytro Apalkov et al.   PROCEEDINGS OF THE IEEE

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Controlling the phase locking of stochastic magnetic bits for ultra-low power computation

(2016) Alice Mizrahi et al.   Scientific Reports

Bayesian Estimation and Inference Using Stochastic Electronics

(2016) Chetan Singh Thakur et al.   Frontiers in Neuroscience

Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

(2016) Janusz J. Nowak et al.   IEEE Magnetics Letters

A Novel Memristor-Based Hardware Security Primitive

(2015) Jimson Mathew et al.   ACM Transactions on Embedded Computing Systems

Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

(2015) An Chen   IEEE ELECTRON DEVICE LETTERS

Cell-to-Cell and Cycle-to-Cycle Retention Statistics in Phase-Change Memory Arrays

(2015) Maurizio Rizzi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

(2015) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices

(2015) Adrien F. Vincent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics

(2015) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memory leads the way to better computing

(2015) H.-S. Philip Wong et al.   Nature Nanotechnology

A new spin on magnetic memories

(2015) Andrew D. Kent et al.   Nature Nanotechnology

High-Density Physical Random Number Generator Using Spin Signals in Multidomain Ferromagnetic Layer

(2015) Sungwoo Chun et al.   Advances in Condensed Matter Physics

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

(2015) Simone Balatti et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

(2014) Stefano Ambrogio et al.   ADVANCED MATERIALS

Spin dice: A scalable truly random number generator based on spintronics

(2014) Akio Fukushima et al.   Applied Physics Express

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

(2014) Jiantao Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Exploiting Process Variations and Programming Sensitivity of Phase Change Memory for Reconfigurable Physical Unclonable Functions

(2014) Le Zhang et al.   IEEE Transactions on Information Forensics and Security

Physical Unclonable Functions and Applications: A Tutorial

(2014) Charles Herder et al.   PROCEEDINGS OF THE IEEE

Noise as a Resource for Computation and Learning in Networks of Spiking Neurons

(2014) Wolfgang Maass   PROCEEDINGS OF THE IEEE

A million spiking-neuron integrated circuit with a scalable communication network and interface

(2014) P. A. Merolla et al.   SCIENCE

Survey of Stochastic Computing

(2013) Armin Alaghi et al.   ACM Transactions on Embedded Computing Systems

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

(2013) Tz-yi Liu et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

PUF Modeling Attacks on Simulated and Silicon Data

(2013) Ulrich Ruhrmair et al.   IEEE Transactions on Information Forensics and Security

Stochastic memristive devices for computing and neuromorphic applications

(2013) Siddharth Gaba et al.   Nanoscale

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

(2012) Chien-Yuan Huang et al.   IEEE ELECTRON DEVICE LETTERS

2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

(2012) Sanu K. Mathew et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput

(2012) Akifumi Kawahara et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

NEURONS ARE POISED NEAR THE EDGE OF CHAOS

(2012) LEON CHUA et al.   INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS

Memristor-based memory: The sneak paths problem and solutions

(2012) Mohammed Affan Zidan et al.   MICROELECTRONICS JOURNAL

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(2011) D. Ielmini et al.   JOURNAL OF APPLIED PHYSICS

Validity of the thermal activation model for spin-transfer torque switching in magnetic tunnel junctions

(2011) R. Heindl et al.   JOURNAL OF APPLIED PHYSICS

Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory

(2011) H. Zhao et al.   JOURNAL OF APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

(2011) Ioan Mihai Miron et al.   NATURE

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Thermochemical resistive switching: materials, mechanisms, and scaling projections

(2011) Daniele Ielmini et al.   PHASE TRANSITIONS

Thermal relaxation rates of magnetic nanoparticles in the presence of magnetic fields and spin-transfer effects

(2011) William Rippard et al.   PHYSICAL REVIEW B

Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

(2011) F. Xiong et al.   SCIENCE

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(2010) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Transient Simulation of Delay and Switching Effects in Phase-Change Memories

(2010) Simone Lavizzari et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

(2010) Mattia Boniardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Power-Up SRAM State as an Identifying Fingerprint and Source of True Random Numbers

(2008) D.E. Holcomb et al.   IEEE TRANSACTIONS ON COMPUTERS

Spin transfer torques

(2008) D.C. Ralph et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B

An ultra-low power CMOS random number generator

(2007) Sheng-hua Zhou et al.   SOLID-STATE ELECTRONICS