Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Large 1/f noise of unipolar resistance switching and its percolating nature

(2009) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxide Nanoelectronics on Demand

(2009) C. Cen et al.   SCIENCE

Nanoscale formation mechanism of conducting filaments in NiO thin films

(2009) C.H. Kim et al.   SOLID STATE COMMUNICATIONS

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

(2008) S. Spiga et al.   MICROELECTRONIC ENGINEERING