Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

Published 2015 View Full Article

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Title
Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3805-3811
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-09-30
DOI
10.1109/ted.2015.2475598

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