Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Title
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 1, Pages 115-121
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-12-21
DOI
10.1109/ted.2017.2777986

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