A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Published 2013 View Full Article

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Title
A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology
Authors
Keywords
-
Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 49, Issue 1, Pages 140-153
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-09-21
DOI
10.1109/jssc.2013.2280296

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