Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(2010) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

RESET Mechanism of TiOx Resistance-Change Memory Device

(2009) Wei Wang et al.   IEEE ELECTRON DEVICE LETTERS

A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage

(2009) Ferdinando Bedeschi et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoscale formation mechanism of conducting filaments in NiO thin films

(2009) C.H. Kim et al.   SOLID STATE COMMUNICATIONS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

(2008) I. K. Yoo et al.   APPLIED PHYSICS LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

(2008) H. L. Lu et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

(2008) A. Lamperti et al.   MICROELECTRONIC ENGINEERING

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B