An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

(2019) Xiangbin Cai et al.   APPLIED PHYSICS LETTERS

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

(2018) Luca Sayadi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

(2018) Patrick Fiorenza et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Review of technology for normally-off HEMTs with p-GaN gate

(2018) Giuseppe Greco et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

(2018) Hsien-Chin Chiu et al.   IEEE Journal of the Electron Devices Society

Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

(2018) Gerrit Lukens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

(2018) Ning Xu et al.   APPLIED PHYSICS LETTERS

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

(2017) Matteo Meneghini et al.   Energies

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

(2017) Andrea Natale Tallarico et al.   IEEE ELECTRON DEVICE LETTERS

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

(2017) Patrick Fiorenza et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of AlN layer sandwiched between the GaN and the Al 2 O 3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

(2017) E. Acurio et al.   MICROELECTRONIC ENGINEERING

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

(2017) E. Acurio et al.   SOLID-STATE ELECTRONICS

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

(2016) Zhili Zhang et al.   Applied Physics Express

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

(2016) Ronghui Hao et al.   APPLIED PHYSICS LETTERS

Ohmic contacts to Gallium Nitride materials

(2016) Giuseppe Greco et al.   APPLIED SURFACE SCIENCE

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

(2016) M. Tapajna et al.   IEEE ELECTRON DEVICE LETTERS

7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

(2016) Qi Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

(2016) Giuseppe Greco et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

(2016) Edward A. Jones et al.   IEEE Journal of Emerging and Selected Topics in Power Electronics

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

(2015) Tian-Li Wu et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

(2015) Finella Lee et al.   IEEE ELECTRON DEVICE LETTERS

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

(2015) Ting-Fu Chang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

(2014) Maojun Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Challenges for energy efficient wide band gap semiconductor power devices

(2014) Fabrizio Roccaforte et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

(2013) Yao Yao et al.   Applied Physics Express

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

(2013) Yuhao Zhang et al.   APPLIED PHYSICS LETTERS

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

(2013) Ye Wang et al.   IEEE ELECTRON DEVICE LETTERS

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

(2013) Injun Hwang et al.   IEEE ELECTRON DEVICE LETTERS

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

(2013) Injun Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer

(2013) Takashi Mizutani et al.   JOURNAL OF APPLIED PHYSICS

Merits of gallium nitride based power conversion

(2013) Mark J Scott et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

(2013) Ming Su et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

(2011) Ki-Won Kim et al.   IEEE ELECTRON DEVICE LETTERS

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

(2011) Giuseppe Greco et al.   Nanoscale Research Letters

Surface and interface issues in wide band gap semiconductor electronics

(2010) F. Roccaforte et al.   APPLIED SURFACE SCIENCE

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

(2010) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

(2010) Kevin J. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Channel scaling of hybrid GaN MOS-HEMTs

(2010) Zhongda Li et al.   SOLID-STATE ELECTRONICS

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS