Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 1, Pages 99-102Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2631640
Keywords
p-type gate; HEMT; breakdown mechanism; time to failure; gate leakage current; trapping/detrapping mechanisms; reliability
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In this letter, we report a detailed experimental investigation of the time-dependent breakdown induced by forward gate stress in GaN- based power HEMTs with a p-type gate, controlled by a Schottky metal/p-GaN junction. When a high stress voltage is applied on the gate, a large voltage drop and an electric field occur in the depletion region of the p-GaN close to the metal interface, promoting the formation of a percolation path. We have investigated the mechanisms underlying the gate breakdown by adopting different stress conditions, analyzing the influence of the temperature, and investigating the activation energy of the traps. In addition, thanks to this approach, the device lifetime has been evaluated and an original empirical model, representing the relationship between the gate leakage current and the time to failure, has been proposed.
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