Journal
APPLIED PHYSICS EXPRESS
Volume 7, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.016502
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Funding
- Natural Science Foundation of China [51177175, 61274039]
- 973 Key Fundamental Research Project of China [2011CB301903, 2010CB923200]
- Ph. D. Programs Foundation of Ministry of Education of China [20110171110021]
- International Science and Technology Collaboration Program of China [2012DFG52260]
- 863 National High-Tech R&D Program of China [2011AA03A101]
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In this letter, a normally-off GaN recessed-gate MOSFET is demonstrated using a nonplasma gate recess technique, in which the access region with AlGaN/GaN heterostructure was selectively grown on a semi-insulating GaN/Si template to naturally form a recessed gate. The normally-off recessed-gate Al2O3/GaN MOSFET presents a high threshold voltage of 3.5V and a maximum drain current density of 550 mA/mm (at a positive gate bias of 12V). A maximum field-effect mobility of 170 cm(2)V(-1)s(-1) and a large on/off current ratio Of More than 10(7) was obtained, which indicates the high quality of the Al2O3/GaN interface. (C) 2014 The Japan Society of Applied Physics
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