High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Title
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 56, Issue 1, Pages 163-167
Publisher
Elsevier BV
Online
2010-10-30
DOI
10.1016/j.sse.2010.10.001

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