High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Published 2013 View Full Article

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Title
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 11, Pages 1370-1372
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-09-18
DOI
10.1109/led.2013.2279844

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