Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Published 2010 View Full Article

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Title
Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 3, Pages 192-194
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-02-11
DOI
10.1109/led.2009.2039024
References
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