Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Published 2015 View Full Article

Authors

Keywords

Journal

IEEE ELECTRON DEVICE LETTERS

Volume 36, Issue 10, Pages 1001-1003

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2015-08-13

DOI

10.1109/led.2015.2465137

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