Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 2, Pages 202-204Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2230312
Keywords
Gate current; gate metal; high-electron-mobility transistor (HEMT); p-type GaN; Schottky contact; Si substrate; threshold voltage; tungsten; W
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The impact of gate metals on the threshold voltage (V-TH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrode as the gate stack on top of the AlGaN/GaN layer. In comparison to the Ni-gate p-GaN HEMTs, the W-gate p-GaN HEMTs showed a higher V-TH of 3.0 V and a lower gate current of 0.02 mA/mm at a gate bias of 10 V. Based on TCAD device simulations, we revealed that these high V-TH and low gate current are attributed to the low gate metal work function and the high Schottky barrier between the p-GaN and the W gate metal.
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