Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

Authors

Keywords

Journal

Volume 37, Issue 4, Pages 385-388

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2016-02-27

DOI

10.1109/led.2016.2535133

Explore over 38,000 international journals covering a vast array of academic fields.

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started