7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

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Title
7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 2, Pages 165-168
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-12-23
DOI
10.1109/led.2015.2511026

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