Efficiency droop in light-emitting diodes: Challenges and countermeasures

Charge carrier velocity distributions in high mobility polymer field-effect transistors

(2012) Tae-Jun Ha et al.   APPLIED PHYSICS LETTERS

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

(2012) Guan-Bo Lin et al.   APPLIED PHYSICS LETTERS

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

(2012) Hieu Pham Trung Nguyen et al.   NANO LETTERS

Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers

(2012) Yun-Yan Zhang et al.   OPTICS EXPRESS

Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes

(2011) Liann-Be Chang et al.   Applied Physics Express

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Temperature-dependence of the internal efficiency droop in GaN-based diodes

(2011) J. Hader et al.   APPLIED PHYSICS LETTERS

Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier

(2011) Chang Sheng Xia et al.   APPLIED PHYSICS LETTERS

Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop

(2011) Sunyong Hwang et al.   APPLIED PHYSICS LETTERS

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Effects of polarization-field tuning in GaInN light-emitting diodes

(2011) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

(2011) Yun Yan Zhang et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

(2011) Zhiqiang Liu et al.   APPLIED PHYSICS LETTERS

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

(2011) Po-Min Tu et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

(2011) Wei Guo et al.   NANO LETTERS

Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

(2010) Ching-Hsueh Chiu et al.   Applied Physics Express

Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes

(2010) Ray-Ming Lin et al.   APPLIED PHYSICS LETTERS

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(2010) Jiaxing Wang et al.   APPLIED PHYSICS LETTERS

Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes

(2010) Jun Ho Son et al.   APPLIED PHYSICS LETTERS

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

(2010) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(2010) N. I. Bochkareva et al.   APPLIED PHYSICS LETTERS

Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2010) Yen-Kuang Kuo et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Reduction in the Efficiency-Droop Effect of InGaN Green Light-Emitting Diodes Using Gradual Quantum Wells

(2010) Ya-Ju Lee et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths

(2010) C. H. Wang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses

(2010) Miao-Chan Tsai et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

(2010) Y. B. Tao et al.   JOURNAL OF APPLIED PHYSICS

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

(2010) Sang-Heon Han et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate

(2010) Shih-Pang Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique

(2010) Hooyoung Song et al.   NANOTECHNOLOGY

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

(2010) Jun Ho Son et al.   OPTICS EXPRESS

Advantages of blue InGaN light-emitting diodes with AlGaN barriers

(2010) Jih-Yuan Chang et al.   OPTICS LETTERS

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

(2010) Yen-Kuang Kuo et al.   OPTICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

(2009) X. Li et al.   APPLIED PHYSICS LETTERS

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

(2009) Hun Jae Chung et al.   APPLIED PHYSICS LETTERS

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

(2009) Markus Maier et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Partial Polarization Matching in GaInN-Based Multiple Quantum Well Blue LEDs Using Ternary GaInN Barriers for a Reduced Efficiency Droop

(2009) Min-Ho Kim et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2009) Sheng-Horng Yen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

(2008) Yi Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics