Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes

Current Status of GaN-Based Solid-State Lighting

(2011) Shuji Nakamura   MRS BULLETIN

Strain induced suppression of silver agglomeration of indium-containing silver contact

(2010) Gwan Ho Jung et al.   APPLIED PHYSICS LETTERS

Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate

(2010) Shih-Pang Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

(2009) X. Li et al.   APPLIED PHYSICS LETTERS

Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN

(2009) Jun Ho Son et al.   APPLIED PHYSICS LETTERS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Transcending the replacement paradigm of solid-state lighting

(2008) Jong Kyu Kim et al.   OPTICS EXPRESS