Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

Published 2010 View Full Article

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Title
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 22, Pages 221106
Publisher
AIP Publishing
Online
2010-06-04
DOI
10.1063/1.3446889
References
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