Effects of polarization-field tuning in GaInN light-emitting diodes

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

(2010) Ahmed N. Noemaun et al.   APPLIED PHYSICS LETTERS

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

(2010) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping

(2010) Ping-Chieh Tsai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS