Temperature-dependence of the internal efficiency droop in GaN-based diodes

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

(2011) Wei Guo et al.   NANO LETTERS

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells

(2010) J. Danhof et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Radiative and Auger Losses in Quantum Wells

(2008) JÖrg Hader et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS