Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

(2009) X. Li et al.   APPLIED PHYSICS LETTERS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

(2008) Shi Jong Leem et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY