Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes
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Title
Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 18, Pages 181108
Publisher
AIP Publishing
Online
2010-11-06
DOI
10.1063/1.3513394
References
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- Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes
- (2009) Sheng-Horng Yen et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes
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- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- (2008) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
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