- Home
- Publications
- Publication Search
- Publication Details
Title
A numerical study of Auger recombination in bulk InGaN
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 23, Pages 231118
Publisher
AIP Publishing
Online
2010-12-11
DOI
10.1063/1.3525605
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
- (2010) X. Ni et al. APPLIED PHYSICS LETTERS
- Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
- (2010) W. Sun et al. APPLIED PHYSICS LETTERS
- Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
- (2010) Aurélien David et al. APPLIED PHYSICS LETTERS
- Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
- (2010) J. Hader et al. APPLIED PHYSICS LETTERS
- Efficiency droop in nitride-based light-emitting diodes
- (2010) Joachim Piprek PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses
- (2010) A. Svane et al. PHYSICAL REVIEW B
- Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
- (2010) X. Ni et al. SUPERLATTICES AND MICROSTRUCTURES
- Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
- (2009) Jiuru Xu et al. APPLIED PHYSICS LETTERS
- Auger recombination rates in nitrides from first principles
- (2009) Kris T. Delaney et al. APPLIED PHYSICS LETTERS
- Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
- (2009) Kenneth J. Vampola et al. APPLIED PHYSICS LETTERS
- Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
- (2009) M. Zhang et al. APPLIED PHYSICS LETTERS
- High-Power and High-Efficiency InGaN-Based Light Emitters
- (2009) Ansgar Laubsch et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
- (2009) Francesco Bertazzi et al. JOURNAL OF APPLIED PHYSICS
- A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
- (2009) Matteo Meneghini et al. JOURNAL OF APPLIED PHYSICS
- On the importance of radiative and Auger losses in GaN-based quantum wells
- (2008) J. Hader et al. APPLIED PHYSICS LETTERS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now