4.6 Article

Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier

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APPLIED PHYSICS LETTERS
Volume 99, Issue 23, Pages -

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AMER INST PHYSICS
DOI: 10.1063/1.3665252

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Blue InGaN/GaN multiple quantum well light-emitting diodes with the conventional and graded last barriers (GLB) are numerically investigated. When the last GaN barrier is replaced by a linearly graded InxGa1-xN barrier with increasing indium composition in the growth direction, the forward voltage is reduced from 3.60V to 3.25 V, and the efficiency droop is improved from 36% to 13%. Simulation results indicate that these improvements can be attributed to the formation of a deep potential well in the GLB which enhances the electron confinement and improves the hole injection efficiency. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665252]

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