On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Electron leakage effects on GaN-based light-emitting diodes

(2011) Joachim Piprek et al.   OPTICAL AND QUANTUM ELECTRONICS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Radiative and Auger Losses in Quantum Wells

(2008) JÖrg Hader et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS