Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers
Authors
Keywords
-
Journal
OPTICS EXPRESS
Volume 20, Issue S1, Pages A133
Publisher
The Optical Society
Online
2012-01-02
DOI
10.1364/oe.20.00a133
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
- (2011) Hongping Zhao et al. OPTICS EXPRESS
- Study of tunneling transport of carriers in structures with an InGaN/GaN active region
- (2011) V. S. Sizov et al. SEMICONDUCTORS
- Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes
- (2010) Chia-Lung Tsai et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model
- (2010) W. W. Chow et al. APPLIED PHYSICS LETTERS
- Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
- (2010) Suk Choi et al. APPLIED PHYSICS LETTERS
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
- (2010) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
- (2010) Chih-Teng Liao et al. JOURNAL OF APPLIED PHYSICS
- Advantages of blue InGaN light-emitting diodes with AlGaN barriers
- (2010) Jih-Yuan Chang et al. OPTICS LETTERS
- Efficiency droop in nitride-based light-emitting diodes
- (2010) Joachim Piprek PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
- (2010) Ümit Ozgur et al. PROCEEDINGS OF THE IEEE
- Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
- (2010) Hongping Zhao et al. SOLID-STATE ELECTRONICS
- Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
- (2008) Aurélien David et al. APPLIED PHYSICS LETTERS
- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- (2008) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
- (2008) Ronald A Arif et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
- (2008) Hongping Zhao et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
- (2008) Hongping Zhao et al. JOURNAL OF APPLIED PHYSICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search