The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

(2013) Sukwon Choi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

(2013) Sukwon Choi et al.   JOURNAL OF APPLIED PHYSICS

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

(2012) Libing Li et al.   APPLIED PHYSICS LETTERS

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

(2012) Matteo Meneghini et al.   APPLIED PHYSICS LETTERS

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

(2012) Feng Gao et al.   IEEE ELECTRON DEVICE LETTERS

The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs

(2012) Sukwon Choi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

(2012) M. G. Ancona et al.   JOURNAL OF APPLIED PHYSICS

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

(2011) Feng Gao et al.   APPLIED PHYSICS LETTERS

Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors

(2011) Chih-Yang Chang et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

(2011) Eric R. Heller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal

(2011) W. Soluch et al.   IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location

(2011) Z.-Q. Fang et al.   JOURNAL OF ELECTRONIC MATERIALS

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

(2011) E.A. Douglas et al.   MICROELECTRONICS RELIABILITY

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

(2010) Prashanth Makaram et al.   APPLIED PHYSICS LETTERS

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

(2010) Athikom Manoi et al.   IEEE ELECTRON DEVICE LETTERS

Elastic and piezoelectric properties of AlN and LiAlO2 single crystals

(2010) Andrey V Sotnikov et al.   IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures

(2010) M. Azize et al.   JOURNAL OF APPLIED PHYSICS

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

(2010) Sefa Demirtas et al.   MICROELECTRONICS RELIABILITY

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

(2010) Jungwoo Joh et al.   MICROELECTRONICS RELIABILITY

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

(2010) E.A. Douglas et al.   MICROELECTRONICS RELIABILITY

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

(2010) Martin Kuball et al.   MICROELECTRONICS RELIABILITY

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

(2010) A Sarua et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

(2009) T. Batten et al.   JOURNAL OF APPLIED PHYSICS

Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy

(2009) Thomas Beechem et al.   JOURNAL OF APPLIED PHYSICS

Physical degradation of GaN HEMT devices under high drain bias reliability testing

(2009) S.Y. Park et al.   MICROELECTRONICS RELIABILITY

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

Three-dimensional finite-element thermal simulation of GaN-based HEMTs

(2009) F. Bertoluzza et al.   MICROELECTRONICS RELIABILITY

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

(2008) Gaudenzio Meneghesso et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY