Article
Engineering, Electrical & Electronic
M. Florovic, J. Kovac, A. Chvala, J. -c. Jacquet, S. L. Delage
Summary: In this article, pinch-off voltage biasing was used for the first time to determine the average channel temperature of the AlGaN/GaN HEMT, excluding the device's electrical parameters dependence in the linear operating mode. The theoretical part focused on the thermal model with temperature-dependent thermal resistance to determine the average temperature of the HEMT under quasi-static operation. The experimental part discussed the appropriate methods for determining the active area average temperature using constant isothermal saturation current or short-pulse current.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Ankit Soni, Mayank Shrivastava
Summary: This study investigated the impact of various charge sources on the electric field distribution and breakdown mechanism of HEMTs, revealing strong correlations between different charges and breakdown voltage. Insights were developed to explain the dependence of HEMT breakdown on surface states, polarization charge, and buffer traps, aiding in the design of efficient surface passivation schemes.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Analytical
Jianhua Liu, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Maolin Zhang, Jing Chen, Xiaoming Huang, Chenyang Huang
Summary: The paper introduces a novel AlGaN/GaN high electron mobility transistor (SDC-HEMT) with an optimized doping concentration gradient, improving its breakdown voltage and electric field distribution along the heterojunction interface. An analytical model based on the equivalent potential method confirms the effectiveness of the proposed methodology through good agreement between simulated and modeled results.
Article
Engineering, Electrical & Electronic
C. Liu, Y. Q. Chen, Y. Liu, P. Lai, Z. Y. He, Y. F. En, T. Y. Wang, Y. Huang
Summary: This work investigates the degradation behavior and physical mechanism of AIGaN/GaN HEMTs under hot-electron stress in hydrogen and nitrogen atmosphere, showing that degradation in hydrogen atmosphere is more severe. Experimental results and COMSOL finite-element simulations support this conclusion.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Pengfei Wan, Jianqun Yang, Hao Jiang, Yuanting Huang, Ling Lv, Lei Dong, Xiaoqing Yue, Bin Zhang, Gang Lin, Guojian Shao, Weiqi Li, Xiaodong Xu, Xiuhai Cui, Xingji Li
Summary: This article investigates the synergistic radiation effects on AlGaN/GaN high electron mobility transistors (HEMTs) under different irradiation conditions. The results show that HEMTs have excellent resistance to ionization radiation, but the drain current and carrier mobility decrease significantly under proton irradiation. The degradation rate caused by combined irradiation is three times higher than that caused by individual proton irradiation, indicating a synergistic effect between ionization and displacement effects.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Yue He, Xiao Wang, Ji-Yu Zhou, Ting-Ting Wang, Meng-Ke Ren, Guo-Qiang Chen, Tao-Fei Pu, Xiao-Bo Li, Mao Jia, Yu-Yu Bu, Jin-Ping Ao
Summary: The sensitivity of AlGaN/GaN ISFETs as pH sensors was improved through gate recess process and ammonium hydroxide treatment. XPS analysis revealed that nitrogen vacancies introduced during the recess process led to a negative V-T shift, which could be improved by ammonium hydroxide treatment, resulting in enhanced current sensitivity of the pH sensor.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Praveen Pal, Yogesh Pratap, Sneha Kabra
Summary: A bio-functionalized biosensor based on ZnO-Tetrapod and AlGaN/GaN HEMT has been designed for the detection of uric acid in human serum. The sensor offers high sensitivity, fast response time, and good match with previous experimental data, while its performance may be affected by surface wettability conditions and Al composition in the barrier layer.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda
Summary: The study revealed that the epitaxial layer structure affects the electrical characteristics of AlGaN/GaN HEMTs. GaN-on-GaN HEMTs showed an improved tradeoff between maximum drain current and breakdown characteristics compared to GaN-on-SiC HEMTs. Moreover, the impact of Fe diffusion on frequency dispersion was relatively limited in GaN-on-GaN devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Pengfei Wan, Jianqun Yang, Gang Lv, Ling Lv, Shangli Dong, Weiqi Li, Xiaodong Xu, Chao Peng, Zhangang Zhang, Xingji Li
Summary: The role of hydrogen in radiation degradation of AlGaN/GaN HEMTs was explored by comparing the performance of hydrogen untreated and pretreated devices under exposure to carbon ions. The experiments showed that hydrogen pretreatment accelerated the shift of threshold voltage and the decrease of transconductance, while also inhibiting the formation of gallium vacancies. Additionally, first principle calculations indicated that the presence of hydrogen in the GaN layer reduced the formation energy of defects, suggesting that hydrogen atoms participate in the evolution of radiation defects in the devices.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu
Summary: This article investigates the effect of low gate bias on R-L in a small-signal model and shows that channel resistance has strong bias dependence. It is observed that R-L dominates above the threshold voltage and yields significant changes in drain-to-source resistance and capacitance. Matching the intrinsic Y-parameter, R-L is found to be important, with good agreement between simulated and measured S-parameters data up to 40 GHz.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Analytical
Ningping Shi, Kejia Wang, Bing Zhou, Jiafu Weng, Zhiyuan Cheng
Summary: This study investigates several different designs of AlGaN/GaN HEMTs field plate structures for device optimization. It is found that the gate-source composite field plate (SG-FP) has the highest breakdown voltage and the best optimized performance among the four structures studied. The experiment and simulation confirm that the SG-FP structure improves the breakdown voltage and reduces the intrinsic on-resistance, resulting in better electrical performance and wider application range for the device.
Article
Engineering, Electrical & Electronic
Ashvinee Deo Meshram, Anumita Sengupta, Tarun K. K. Bhattacharyya, Gourab Dutta
Summary: A novel beta-(AlxGa1-x)(2)O-3/gallium oxide (Ga2O3) modulation-doped field-effect transistor (MODFET) with p-GaN gate is proposed and investigated for the first time. The performance and device operation of the proposed MODFET are evaluated using a TCAD device simulator calibrated with experimental results. The proposed MODFET exhibits higher driving capability and lower ON-resistance compared to conventional Ga2O3-MODFETs of similar device dimensions. The impact of individual device parameters on the electrical characteristics of the proposed device is also studied in detail. Additionally, an analytical model is developed to accurately estimate the threshold voltage of these normally-OFF devices, and it is rigorously validated across a wide range of device parameters.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Computer Science, Information Systems
Martin Florovic, Jaroslav Kovac, Ales Chvala, Jaroslav Kovac, Jean-Claude Jacquet, Sylvain Laurent Delage
Summary: This article introduces a differential analysis method using a device analytical spatial electrical model to explore the impact of temperature profile and trapping phenomena on electrical attributes. Through experimental and theoretical analysis, the average temperature of the device was determined and compared with the threshold voltage shift of HEMT.
Article
Engineering, Electrical & Electronic
Hao-Ching Hsu, Hong-Gang Xie, Yue-Ming Hsin
Summary: In this study, a normally-on AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) and a normally-off AlGaN/GaN metal-insulator-semiconductor field-effect transistor (MIS-FET) were fabricated using a dual-channel epitaxy structure. The MIS gate of the devices was recessed and cleaned using diluted buffered oxide etch (BOE), HCl, and tetramethylammonium hydroxide (TMAH) solutions, followed by the deposition of a 20 nm Al2O3 layer through atomic layer deposition (ALD) and post-deposition annealing. The non-recessed MIS-HEMT exhibited a threshold voltage of -9.81 V, high drain current of 660.76 mA mm(-1), and small on-resistance of 6.47 omega mm. The recessed gate MIS-FET showed a positive threshold voltage of 1.46 V and drain current of 144.81 mA mm(-1). Both devices demonstrated a high gate breakdown voltage and low I-V hysteresis under double sweep I (D)-V (GS) measurement.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Fangzhou Wang, Wanjun Chen, Yang Wang, Ruize Sun, Guojian Ding, Ping Yu, Xiaohui Wang, Qi Feng, Wenjun Xu, Xiaorui Xu, Chao Liu, Zeheng Wang, Haiqiang Jia, Hong Chen, Bo Zhang
Summary: In this article, an analytical model is presented to predict the 2-D electron-gas (2DEG) density (n(S)) in AlGaN/GaN high-electron-mobility-transistor (HEMT) by considering the buffer charge (BC) effect. The model includes an expression for the BC density (sigma(BC)) as a function of the buffer doping concentration (N-bu) and energy level (E-bu), and incorporates the contributions of sigma(BC) into the calculation of n(S). The model utilizes the one-variable quadratic equation method to express sigma(BC) and establishes a quantitative relationship between n(S) and N-bu under different E-bu cases. The model shows improved accuracy compared to conventional methods and can be useful for the design, analysis, and simulation of AlGaN/GaN HEMT devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
