Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

Published 2009 View Full Article

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Title
Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 9, Pages 094509
Publisher
AIP Publishing
Online
2009-11-12
DOI
10.1063/1.3254197

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