Physical degradation of GaN HEMT devices under high drain bias reliability testing

Published 2009 View Full Article

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Title
Physical degradation of GaN HEMT devices under high drain bias reliability testing
Authors
Keywords
-
Journal
MICROELECTRONICS RELIABILITY
Volume 49, Issue 5, Pages 478-483
Publisher
Elsevier BV
Online
2009-03-31
DOI
10.1016/j.microrel.2009.02.015

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