Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

(2010) Prashanth Makaram et al.   APPLIED PHYSICS LETTERS

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

(2010) T. Roy et al.   APPLIED PHYSICS LETTERS

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

(2009) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical degradation of GaN HEMT devices under high drain bias reliability testing

(2009) S.Y. Park et al.   MICROELECTRONICS RELIABILITY

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

(2008) U. Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS