Journal
MICROELECTRONICS RELIABILITY
Volume 49, Issue 5, Pages 468-473Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2009.02.009
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The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management. (C) 2009 Elsevier Ltd. All rights reserved.
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