Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

(2012) N. Killat et al.   IEEE ELECTRON DEVICE LETTERS

Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

(2011) Eric R. Heller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

(2010) Athikom Manoi et al.   IEEE ELECTRON DEVICE LETTERS

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

(2009) T. Batten et al.   JOURNAL OF APPLIED PHYSICS

Three-dimensional finite-element thermal simulation of GaN-based HEMTs

(2009) F. Bertoluzza et al.   MICROELECTRONICS RELIABILITY

Micro-Raman thermometry in the presence of complex stresses in GaN devices

(2008) T. Beechem et al.   JOURNAL OF APPLIED PHYSICS