Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

Published 2010 View Full Article

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Title
Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 12, Pages 1395-1397
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-10-20
DOI
10.1109/led.2010.2077730
References
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