AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

Authors

Keywords

Journal

Volume 51, Issue 2, Pages 195-200

Publisher

Elsevier BV

Online

2010-09-25

DOI

10.1016/j.microrel.2010.08.014

Discuss science. Find collaborators. Network.

Join a conversation

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now